MICROWAVE POWER GaAs FET

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10.70-11.70GHz 8-Watt Internally Matched Power FET

FEATURES • 10.70–11.70GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression • 30 Power Added Efficiency • -46 dBc IM3 at PO = 28.5 dBm SCL • 100 Tested for DC, RF, and RTH

X, Ku-Band Internally Matched FET

DESCRIPTION The FLM1011-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Output Power

GaAs MES FET

DESCRIPTION The NEZ1011-8E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To reduce thermal resistance, the device has a PHS

8W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic