DESCRIPTION

The NEZ1011-8E is power GaAs FET which provides high

gain, high efficiency and high output power in Ku-band.

The internal input and output matching enables guaranteed

performance to be achieved with only a 50 W external

circuit.

To reduce thermal resistance, the device has a PHS

(Plated Heat Sink) structure.

The device incorporates WSi (tungsten silicide) gate for

high reliability and SiO2 glassivation for surface stability.

FEATURES

• Class A operation

• High output power: 39.5 dBm (min)

• High gain: 6.0 dB (min)

• Internally matched

• High reliability