位置：首页 > IC中文资料第1682页 > NESG3032M14-T3-A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG3032M14-T3-A | NPNSiGeRFTransistorforLowNoise,High-Gain NPNSiGeRFTransistorforLowNoise,High-Gain Amplification4-PinLead-LessMinimold(M14,1208PKG) FEATURES •TheNESG3032M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NESG3032M14-T3-A | NPNSILICONGERMANIUMRFTRANSISTOR 文件：267.53 Kbytes Page：6 Pages | CEL California Eastern Laboratories |  | |
NPNSiGeRFTransistorforLowNoise,High-Gain NPNSiGeRFTransistorforLowNoise,High-Gain Amplification4-PinLead-LessMinimold(M14,1208PKG) FEATURES •TheNESG3032M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSILICONGERMANIUMRFTRANSISTOR 文件：267.53 Kbytes Page：6 Pages | CEL California Eastern Laboratories | | |
NESG3032M14-T3-A产品属性
- 类型
描述
- 型号
NESG3032M14-T3-A
- 功能描述
射频硅锗晶体管 NPN Silicn Germanium Amp/Oscilltr
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2122+ |
66000 |
全新原装正品,价格美丽,优势渠道 |
|||||
RENESAS |
15+ |
SOT-343 |
11945 |
全新原装 实单必成 |
|||
NEC/RENESAS |
21+ |
SOT523-4 |
10000 |
原装现货假一罚十 |
|||
RENESAS/瑞萨 |
21+ |
65200 |
|||||
RENESAS/瑞萨 |
13+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
RENESAS |
19+ 20+ |
SOT-343 |
32350 |
深圳存库原装现货 |
|||
NEC |
2023+ |
M14 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
2020+ |
SOT-163 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
09+ |
M14 |
25500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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NESG3032M14-T3-A规格书下载地址
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DdatasheetPDF页码索引
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