位置：首页 > IC中文资料第1682页 > NESG3032M14-T3-A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG3032M14-T3-A | NPN SiGe RF Transistor for Low Noise, High-Gain NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ | RENESAS 瑞萨 |   | |
NESG3032M14-T3-A | NPN SILICON GERMANIUM RF TRANSISTOR 文件：267.53 Kbytes Page：6 Pages | CEL | | |
NPN SiGe RF Transistor for Low Noise, High-Gain NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR 文件：267.53 Kbytes Page：6 Pages | CEL | |
NESG3032M14-T3-A产品属性
- 类型
描述
- 型号
NESG3032M14-T3-A
- 功能描述
射频硅锗晶体管 NPN Silicn Germanium Amp/Oscilltr
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
25500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
24+ |
SOT-163 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
09+ |
M14 |
25500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
23+ |
SOT-143 |
8600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
RENESAS/瑞萨 |
12+PB |
SOT-23 |
1830 |
原装现货 |
|||
RENESAS/瑞萨 |
2450+ |
SOT23-3 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
2025+ |
SOT23 |
3365 |
全新原厂原装产品、公司现货销售 |
|||
NEC |
SOT23-4 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS/瑞萨 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
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DdatasheetPDF页码索引
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