位置：首页 > IC中文资料第1682页 > NESG3032M14-T3-A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG3032M14-T3-A | NPN SiGe RF Transistor for Low Noise, High-Gain NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ | RENESAS 瑞萨 |   | |
NESG3032M14-T3-A | NPN SILICON GERMANIUM RF TRANSISTOR 文件：267.53 Kbytes Page：6 Pages | CEL | | |
NPN SiGe RF Transistor for Low Noise, High-Gain NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR 文件：267.53 Kbytes Page：6 Pages | CEL | |
NESG3032M14-T3-A产品属性
- 类型
描述
- 型号
NESG3032M14-T3-A
- 功能描述
射频硅锗晶体管 NPN Silicn Germanium Amp/Oscilltr
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
M14 |
50000 |
全新原装正品现货,支持订货 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS |
22+ |
SOT-343 |
20000 |
公司只做原装 品质保障 |
|||
NEC |
SOT23-4 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS |
24+ |
SOT-343 |
8000 |
新到现货，只做全新原装正品 |
|||
RENESAS |
23+ |
SOT-343 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
RENESAS |
23+ |
SOT-343 |
11845 |
全新原装正品现货,支持订货 |
|||
RENESAS |
25+ |
SOT-343 |
8800 |
公司只做原装,详情请咨询 |
|||
RENESAS |
24+ |
SOT-343 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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DdatasheetPDF页码索引
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