型号 功能描述 生产厂家 企业 LOGO 操作
NESG250134

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

RENESAS

瑞萨

NESG250134

NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

文件:706.62 Kbytes Page:13 Pages

CEL

NESG250134

RF Power Bipolar Transistor

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

RENESAS

瑞萨

RF & Microwave device

文件:137.58 Kbytes Page:2 Pages

RENESAS

瑞萨

NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

文件:706.62 Kbytes Page:13 Pages

CEL

包装:盒 描述:EVAL BOARD NESG250134 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

文件:706.62 Kbytes Page:13 Pages

CEL

封装/外壳:TO-243AA 包装:托盘 描述:TRANS NPN 900MHZ SOT-89 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

NESG250134产品属性

  • 类型

    描述

  • 型号

    NESG250134

  • 功能描述

    射频硅锗晶体管 NPN Med Power Amp

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2025-10-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
345
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
24+
TO-89
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS
14+
SOT-89
15000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
25+
SOT-89
20300
RENESAS/瑞萨原装特价NESG250134即刻询购立享优惠#长期有货
NEC
22+
SOT-89
100000
代理渠道/只做原装/可含税
RENESAS/瑞萨
25+
SOT-89
65428
百分百原装现货 实单必成
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS/瑞萨
24+
SOT-89
880000
明嘉莱只做原装正品现货
RENESAS
SOT89
30000000
原装进口中国百强元器件分销企业 专注RENESAS十年 公司大量RENESAS现货 欢迎您的咨询 百年不变 服务至上
RENESAS/瑞萨
22+
SOT-89
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

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