型号 功能描述 生产厂家 企业 LOGO 操作
NESG250134

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

RENESAS

瑞萨

NESG250134

NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

文件:706.62 Kbytes Page:13 Pages

CEL

NESG250134

RF Power Bipolar Transistor

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

RENESAS

瑞萨

RF & Microwave device

文件:137.58 Kbytes Page:2 Pages

RENESAS

瑞萨

NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

文件:706.62 Kbytes Page:13 Pages

CEL

包装:盒 描述:EVAL BOARD NESG250134 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

文件:706.62 Kbytes Page:13 Pages

CEL

封装/外壳:TO-243AA 包装:托盘 描述:TRANS NPN 900MHZ SOT-89 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

NESG250134产品属性

  • 类型

    描述

  • 型号

    NESG250134

  • 功能描述

    射频硅锗晶体管 NPN Med Power Amp

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2026-3-14 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
TO-89
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS/瑞萨
2026+
SOT-89
65428
百分百原装现货 实单必成
RENESAS/瑞萨
24+
SOT-89
880000
明嘉莱只做原装正品现货
RENESAS/瑞萨
23+
SOT-89
50000
原装正品 支持实单
RENESAS
25+
SOT-343
15000
只做进口原装假一罚百
RENESAS
22+
SOT-89
20000
公司只做原装 品质保障
CEL
24+
原厂原装
5000
原装正品
RENESAS/瑞萨
2450+
SOT89
8850
只做原装正品假一赔十为客户做到零风险!!
FET
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
RENESAS
2511
34 PACKGE
379
电子元器件采购降本30%!原厂直采,砍掉中间差价

NESG250134数据表相关新闻