位置：首页 > IC中文资料第4352页 > NESG250134-T1-AZ
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG250134-T1-AZ | NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = | RENESAS 瑞萨 |   | |
NESG250134-T1-AZ | 封装/外壳：TO-243AA 包装：托盘 描述：TRANS NPN 900MHZ SOT-89 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | |
NESG250134-T1-AZ | NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 文件：706.62 Kbytes Page：13 Pages | CEL | | |
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = | RENESAS 瑞萨 | |
NESG250134-T1-AZ产品属性
- 类型
描述
- 型号
NESG250134-T1-AZ
- 功能描述
射频硅锗晶体管 NPN Med Power Amp
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SOT89 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
2026+ |
SOT-89 |
65428 |
百分百原装现货 实单必成 |
|||
RENESAS/瑞萨 |
24+ |
SOT-89 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
14+ |
SOT-89 |
15000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2450+ |
SOT89 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
16+ |
SOD-89 |
13800 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
RENESAS |
22+ |
SOT-89 |
20000 |
公司只做原装 品质保障 |
|||
RENESAS/瑞萨 |
10+ |
SOT-89 |
1000 |
原装现货 |
|||
RENESAS |
21+ |
SOT-89 |
1000 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
NEC |
09+ |
TO89-4 |
921 |
原装现货海量库存欢迎咨询 |
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DdatasheetPDF页码索引
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