位置：首页 > IC中文资料 > NESG240033-T1B-A(YFB)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = | NEC 瑞萨 |   | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = | NEC 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
3705 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
24+ |
SOT-23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
25+ |
SOT-23 |
18243 |
RENESAS/瑞萨原装特价NESG240033-T1B-A即刻询购立享优惠#长期有货 |
|||
RENESAS/瑞萨 |
25+ |
SOT-23 |
65428 |
百分百原装现货 实单必成 |
|||
NEC |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
11+ |
SOT-23 |
455 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
NEC |
6000 |
面议 |
19 |
DIP/SMD |
|||
RENESAS/瑞萨 |
2450+ |
SOT23-3 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
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DdatasheetPDF页码索引
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