位置：首页 > IC中文资料 > NESG240033-T1B-A(YFB)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = | NEC 瑞萨 |   | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = | NEC 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas |
21+ |
- |
40 |
只做原装鄙视假货15118075546 |
|||
RENESAS |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
NEC/RENESAS瑞萨 |
23+ |
SOT-89 |
89630 |
当天发货全新原装现货 |
|||
RENESAS/瑞萨 |
2450+ |
SOT23-3 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
24+ |
SOT-23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
23+ |
SOT323 |
27000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
23+ |
SOT23 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
RENESAS/瑞萨 |
2447 |
34PACKGE |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
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DdatasheetPDF页码索引
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