型号 功能描述 生产厂家 企业 LOGO 操作
NESG240033-T1B

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NESG240033-T1B

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NESG240033-T1B产品属性

  • 类型

    描述

  • 型号

    NESG240033-T1B

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)

更新时间:2025-10-31 16:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
11+
SOT-23
1612
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
24+
NA/
7218
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
24+
N/A
8000
全新原装正品,现货销售
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
23+
SOT23-3
7850
只做原装正品假一赔十为客户做到零风险!!
RENESAS
24+
SOT-23
25000
一级专营品牌全新原装热卖
RENESAS
24+
SOT-23
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
NEC
23+
SOT23
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
2024+
N/A
70000
柒号只做原装 现货价秒杀全网

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