型号 功能描述 生产厂家 企业 LOGO 操作
NESG240033-T1B-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

NEC

瑞萨

NESG240033-T1B-A产品属性

  • 类型

    描述

  • 型号

    NESG240033-T1B-A

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)

更新时间:2025-10-31 16:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
24+
N/A
8000
全新原装正品,现货销售
CEL
24+
原厂原装
5000
原装正品
Renesas
21+
-
40
全新原装鄙视假货
RENESAS/瑞萨
2450+
SOT23-3
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS/瑞萨
11+
SOT-23
455
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
24+
SOT89
63000
只做全新原装进口现货
RENESAS/瑞萨
24+
NA/
3705
原装现货,当天可交货,原型号开票
NEC
6000
面议
19
DIP/SMD
NEC
25+
SOT-89
2987
只售原装自家现货!诚信经营!欢迎来电!
RENESAS
原厂封装
9800
原装进口公司现货假一赔百

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