NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECslow profile, flat lead style M05 Package provides high frequency p

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

NPN SiGe HIGH FREQUENCY TRANSISTOR

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