型号 功能描述 生产厂家 企业 LOGO 操作
NESG2101M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECslow profile, flat lead style M05 Package provides high frequency p

NEC

瑞萨

NESG2101M05-T1

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

RENESAS

瑞萨

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

RENESAS

瑞萨

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:580.99 Kbytes Page:15 Pages

CEL

NESG2101M05-T1产品属性

  • 类型

    描述

  • 型号

    NESG2101M05-T1

  • 功能描述

    射频硅锗晶体管 NPN SiGe High Freq

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2026-2-5 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
SOT343
21574
郑重承诺只做原装进口现货
NEC
24+
SOT343
18560
假一赔十全新原装现货特价供应工厂客户可放款
RENESAS
12+
SOT343
3000
NEC
23+
SOT343
8650
受权代理!全新原装现货特价热卖!
Renesas(瑞萨)
24+
标准封装
9048
支持大陆交货,美金交易。原装现货库存。
NEC
2016+
SOT-343
3000
只做原装,假一罚十,公司可开17%增值税发票!
RENESAS
24+
SOT343
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS/瑞萨
25+
SOT343
18242
RENESAS/瑞萨原装特价NESG2101M05-T1-A即刻询购立享优惠#长期有货
NEC
24+
SOT343
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
RENESAS
20+
SOT343
45000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

NESG2101M05-T1数据表相关新闻