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NESG2021M16价格
参考价格：￥4.3064
型号：NESG2021M16-A 品牌：CEL 备注：这里有NESG2021M16多少钱，2025年最近7天走势，今日出价，今日竞价，NESG2021M16批发/采购报价，NESG2021M16行情走势销售排行榜，NESG2021M16报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG2021M16 | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., | NEC 瑞萨 |   | |
NESG2021M16 | NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga | RENESAS 瑞萨 | | |
NESG2021M16 | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) 文件：861.91 Kbytes Page：11 Pages | CEL | | |
NESG2021M16 | NPN SiGe HIGH FREQUENCY TRANSISTOR | ETC 知名厂家 | ETC | |
NESG2021M16 | NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：224.18 Kbytes Page：3 Pages | CALMIRCO | | |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., | NEC 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., | NEC 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., | NEC 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) 文件：861.91 Kbytes Page：11 Pages | CEL | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) 文件：861.91 Kbytes Page：11 Pages | CEL | | ||
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：224.18 Kbytes Page：3 Pages | CALMIRCO | | ||
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：224.18 Kbytes Page：3 Pages | CALMIRCO | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) 文件：861.91 Kbytes Page：11 Pages | CEL | |
NESG2021M16产品属性
- 类型
描述
- 型号
NESG2021M16
- 功能描述
射频硅锗晶体管 RO 551-NESG2021M16-A
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEL |
新年份 |
SOT-343 |
15000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
RENESAS |
24+ |
6-PINM |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
- |
23+ |
SOT343 |
27000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CEL |
24+ |
原厂原封 |
4000 |
原装正品 |
|||
CEL |
25+ |
SOT-343F |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
NEC |
24+ |
SOT343 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
20+ |
SOT343 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
CEL |
2025+ |
SOT-343 |
7695 |
全新原厂原装产品、公司现货销售 |
|||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
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DdatasheetPDF页码索引
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