您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第1501页 > NESG2021M16

NESG2021M16价格

参考价格：￥4.3064

型号：NESG2021M16-A 品牌：CEL 备注：这里有NESG2021M16多少钱，2024年最近7天走势，今日出价，今日竞价，NESG2021M16批发/采购报价，NESG2021M16行情走势销售排行榜，NESG2021M16报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NESG2021M16

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG2021M16

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG2021M16

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

文件：861.91 Kbytes Page：11 Pages

CEL

California Eastern Laboratories

CEL
NESG2021M16

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

文件：224.18 Kbytes Page：3 Pages

CALMIRCO

California Micro Devices Corp

CALMIRCO
NESG2021M16-A

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG2021M16-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG2021M16-T3

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG2021M16-T3

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG2021M16-T3-A

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG2021M16-T3-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG2021M16-A

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

文件：861.91 Kbytes Page：11 Pages

CEL

California Eastern Laboratories

CEL
NESG2021M16-T3

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

文件：861.91 Kbytes Page：11 Pages

CEL

California Eastern Laboratories

CEL
NESG2021M16-T3

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

文件：224.18 Kbytes Page：3 Pages

CALMIRCO

California Micro Devices Corp

CALMIRCO
NESG2021M16-T3-A

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

文件：224.18 Kbytes Page：3 Pages

CALMIRCO

California Micro Devices Corp

CALMIRCO
NESG2021M16-T3-A

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

文件：861.91 Kbytes Page：11 Pages

CEL

California Eastern Laboratories

CEL

NESG2021M16产品属性

  • 类型

    描述

  • 型号

    NESG2021M16

  • 功能描述

    射频硅锗晶体管 RO 551-NESG2021M16-A

  • RoHS

    否

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

NESG2021M16供应商更多...

更新时间：2024-5-22 11:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市百视威讯电子科技有限公司
NESG2030M04
23+
N/A
90750
正品授权货源可靠
询价
深圳市润联芯城科技有限公司
NESG2021M16
NEC
23+
6-PINM
50000
原装正品 支持实单
询价
深圳市中联芯电子有限公司
NESG2021M16-T3
RENESAS
24+
6-PINM
9000
只做原装正品 有挂有货 假一赔十
询价
中天科工半导体（深圳）有限公司
NESG2030M04-T1-A
NEC
20+
SOT343
49000
原装优势主营型号-可开原型号增税票
询价
深圳市宇创芯科技有限公司
NESG2021M16
NEC
22+
6-PINM
9600
原装现货,优势供应,支持实单!
询价
贸泽芯城（深圳）电子科技有限公司
NESG2030M04
-
SOT343
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳宇航军工半导体有限公司
NESG2030M04
NEC
19+
SOT-343
87068
原厂代理渠道,每一颗芯片都可追溯原厂；
询价
深圳市威尔健半导体有限公司
NESG2030M04-T1-A
RENESAS/瑞萨
23+
SOT343
50000
全新原装正品现货,支持订货
询价
深圳市科恒伟业电子有限公司
NESG2030M04-T1-A
NEC
1742+
SOT343
98215
只要网上有绝对有货!只做原装正品!
询价
千层芯半导体(深圳)有限公司
NESG2021M16-A
CEL
17+
原厂原封
4000
原装正品
询价

NESG2021M16芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • Hitachi
  • IDT
  • LUGUANG
  • MOLEX4
  • NEC
  • POWEREX
  • SILABS
  • SUPERWORLD

NESG2021M16规格书下载地址

NESG2021M16参数引脚图相关

NESG2021M16数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示