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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG2021M16-T3-A | NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP., | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NESG2021M16-T3-A | NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
NESG2021M16-T3-A | NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) 文件：861.91 Kbytes Page：11 Pages | CEL California Eastern Laboratories |  | |
NESG2021M16-T3-A | NECsNPNSiGeHIGHFREQUENCYTRANSISTOR 文件：224.18 Kbytes Page：3 Pages | CALMIRCO California Micro Devices Corp |  | |
NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP., | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) 文件：861.91 Kbytes Page：11 Pages | CEL California Eastern Laboratories | | | |
NECsNPNSiGeHIGHFREQUENCYTRANSISTOR 文件：224.18 Kbytes Page：3 Pages | CALMIRCO California Micro Devices Corp | | |
NESG2021M16-T3-A产品属性
- 类型
描述
- 型号
NESG2021M16-T3-A
- 功能描述
射频硅锗晶体管 NPN High Frequency
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
1742+ |
SOT343 |
98215 |
只要网上有绝对有货!只做原装正品! |
|||
RENESAS/瑞萨 |
23+ |
SOT-343 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
CEL |
16+ |
SOT-343 |
15000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
NEC |
6000 |
面议 |
19 |
DIP/SMD |
|||
CEL |
2023+ |
SOT-343 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
RENESAS/瑞萨 |
SOT-343 |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
CEL |
17+ |
原厂原封 |
5000 |
原装正品 |
|||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
|||
NEC |
SOT343 |
68900 |
原包原标签100%进口原装常备现货! |
||||
NEC |
23+ |
SOT-343 |
6000 |
原装正品，支持实单 |
NESG2021M16-T3-A芯片相关品牌
NESG2021M16-T3-A规格书下载地址
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NESG2021M16-T3-A数据表相关新闻
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VoxPower的NEVO+1200系列采用紧凑轻巧的封装，可提供1200W功率
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DdatasheetPDF页码索引
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