型号 功能描述 生产厂家 企业 LOGO 操作
NESG2021M16-T3-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP.,

NEC

瑞萨

NESG2021M16-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga

RENESAS

瑞萨

NESG2021M16-T3-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:861.91 Kbytes Page:11 Pages

CEL

NESG2021M16-T3-A

NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:224.18 Kbytes Page:3 Pages

CALMIRCO

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP.,

NEC

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:861.91 Kbytes Page:11 Pages

CEL

NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:224.18 Kbytes Page:3 Pages

CALMIRCO

NESG2021M16-T3-A产品属性

  • 类型

    描述

  • 型号

    NESG2021M16-T3-A

  • 功能描述

    射频硅锗晶体管 NPN High Frequency

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2025-10-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
9920
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
24+
SOT343
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC
20+
SOT343
49000
原装优势主营型号-可开原型号增税票
NEC
23+
SOT-343
50000
原装正品 支持实单
NEC
21+
SOT-343
10000
原装现货假一罚十
CEL
24+
原厂原封
5000
原装正品
NEC
22+
SOT343
3000
原装正品,支持实单
NEC
6000
面议
19
DIP/SMD
CEL
16+
SOT-343
15000
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
CEL
25+
SOT-343F
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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