型号 功能描述 生产厂家 企业 LOGO 操作
NESG2021M16-T3

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP.,

NEC

瑞萨

NESG2021M16-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga

RENESAS

瑞萨

NESG2021M16-T3

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:861.91 Kbytes Page:11 Pages

CEL

NESG2021M16-T3

NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:224.18 Kbytes Page:3 Pages

CALMIRCO

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP.,

NEC

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga

RENESAS

瑞萨

NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:224.18 Kbytes Page:3 Pages

CALMIRCO

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:861.91 Kbytes Page:11 Pages

CEL

NESG2021M16-T3产品属性

  • 类型

    描述

  • 型号

    NESG2021M16-T3

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    Trans GP BJT NPN 5V 0.035A 6-Pin LeadLess Mini-Mold T/R

更新时间:2025-10-30 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
9920
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
24+
SOT343
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC
20+
SOT343
49000
原装优势主营型号-可开原型号增税票
RENESAS
12+
6-PINM
5427
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
23+
SOT-343
50000
原装正品 支持实单
CEL
24+
原厂原封
5000
原装正品
NEC
6000
面议
19
DIP/SMD
CEL
25+
SOT-343F
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
CEL
新年份
SOT-343
15000
原装正品大量现货,要多可发货,实单带接受价来谈!
CEL
2025+
SOT-343
7695
全新原厂原装产品、公司现货销售

NESG2021M16-T3数据表相关新闻