型号 功能描述 生产厂家&企业 LOGO 操作
NESG2021M16-T3

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG2021M16-T3

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG2021M16-T3

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

文件:861.91 Kbytes Page:11 Pages

CEL

California Eastern Laboratories

CEL
NESG2021M16-T3

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

文件:224.18 Kbytes Page:3 Pages

CALMIRCO

California Micro Devices Corp

CALMIRCO

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz NF=1.3dBTYP.,Ga

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

文件:224.18 Kbytes Page:3 Pages

CALMIRCO

California Micro Devices Corp

CALMIRCO

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

文件:861.91 Kbytes Page:11 Pages

CEL

California Eastern Laboratories

CEL

NESG2021M16-T3产品属性

  • 类型

    描述

  • 型号

    NESG2021M16-T3

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    Trans GP BJT NPN 5V 0.035A 6-Pin LeadLess Mini-Mold T/R

更新时间:2024-5-22 13:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
23+
SOT-343
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
RENESAS
6-PINM
9497
集团化配单-有更多数量-免费送样-原包装正品现货-正规
RENESAS
2023+
6-PINM
700000
柒号芯城跟原厂的距离只有0.07公分
RENESAS
2211+
6-PINM
2807
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
NEC
23+
SOT-343
6000
原装正品,支持实单
NEC
22+
SOT-343
9600
原装现货,优势供应,支持实单!
NEC
21+
SOT-343
10000
原装现货假一罚十
RENESAS/Renesas Electronics Am
21+
6-PINM
5427
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
22
SOT343
28000
3月31原装,微信报价
23+
N/A
90750
正品授权货源可靠

NESG2021M16-T3芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • Hitachi
  • IDT
  • LUGUANG
  • MOLEX4
  • NEC
  • POWEREX
  • SILABS
  • SUPERWORLD

NESG2021M16-T3数据表相关新闻