型号 功能描述 生产厂家 企业 LOGO 操作
NE960R2

0.2 W X, Ku-BAND POWER GaAs MES FET

DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver a

NEC

瑞萨

NE960R2

N-CHANNEL GaAs MES FET

DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver

RENESAS

瑞萨

NE960R2

0.2 W X, Ku-BAND POWER GaAs MES FET

RENESAS

瑞萨

N-CHANNEL GaAs MES FET

DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver

RENESAS

瑞萨

0.2 W X, Ku-BAND POWER GaAs MES FET

DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver a

NEC

瑞萨

0.2 W X, Ku-BAND POWER GaAs MES FET

DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver a

NEC

瑞萨

N-CHANNEL GaAs MES FET

DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver

RENESAS

瑞萨

0.2W X, Ku-BAND POWER GaAs MESFET

RENESAS

瑞萨

0.2W X, Ku-BAND POWER GaAs MESFET

文件:29.43 Kbytes Page:3 Pages

NEC

瑞萨

0.2W X, Ku-BAND POWER GaAs MESFET

文件:30.26 Kbytes Page:3 Pages

CEL

0.2W X, Ku-BAND POWER GaAs MESFET

文件:29.43 Kbytes Page:3 Pages

NEC

瑞萨

NE960R2产品属性

  • 类型

    描述

  • 型号

    NE960R2

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    0.2 W X, Ku-BAND POWER GaAs MES FET

更新时间:2026-3-1 10:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
SOT-23
9600
原装现货,优势供应,支持实单!
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
NEC
24+
SOT-23
409
NK/南科功率
2025+
SOT-23
986966
国产
RENESAS/瑞萨
23+
SOT-23
50000
原装正品 支持实单
NDK
DIP-5
35560
一级代理 原装正品假一罚十价格优势长期供货
NEC
23+
SOT-23
26690
原厂授权一级代理,专业海外优势订货,价格优势、品种
CEL
24+
原厂原封
4000
原装正品
RENESAS/瑞萨
21+
SOT23
1855
CELESTICACO
24+
原装进口原厂原包接受订货
2866
原装现货假一罚十

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