位置：首页 > IC中文资料第6443页 > NE960R2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE960R2 | 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver a | NEC 瑞萨 |   | |
NE960R2 | N-CHANNEL GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver | RENESAS 瑞萨 | | |
NE960R2 | 0.2 W X, Ku-BAND POWER GaAs MES FET | RENESAS 瑞萨 | | |
N-CHANNEL GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver | RENESAS 瑞萨 | | ||
0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver a | NEC 瑞萨 | | ||
0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver a | NEC 瑞萨 | | ||
N-CHANNEL GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver | RENESAS 瑞萨 | | ||
0.2W X, Ku-BAND POWER GaAs MESFET | RENESAS 瑞萨 | | ||
0.2W X, Ku-BAND POWER GaAs MESFET 文件：29.43 Kbytes Page：3 Pages | NEC 瑞萨 | | ||
0.2W X, Ku-BAND POWER GaAs MESFET 文件：30.26 Kbytes Page：3 Pages | CEL | | ||
0.2W X, Ku-BAND POWER GaAs MESFET 文件：29.43 Kbytes Page：3 Pages | NEC 瑞萨 | |
NE960R2产品属性
- 类型
描述
- 型号
NE960R2
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
0.2 W X, Ku-BAND POWER GaAs MES FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
RENESAS/瑞萨 |
22+ |
SOT23 |
12245 |
现货,原厂原装假一罚十! |
|||
S/PHI |
6000 |
面议 |
19 |
CDIP |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
RENESAS/瑞萨 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
23+ |
SOT-23 |
26690 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
2447 |
SOT23 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
21+ |
SOT23 |
1855 |
||||
NDK |
DIP-5 |
35560 |
一级代理 原装正品假一罚十价格优势长期供货 |
NE960R2规格书下载地址
NE960R2参数引脚图相关
- pc100
- PC/104
- p800
- p600
- otl功率放大器
- opa642
- opa2604
- op37
- op07中文资料
- op07
- OLED显示屏
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- NED-35B
- NED-35A
- NED-35
- NED-100
- NeChip
- NEB-N
- NEBJ25R
- NEBJ25C
- NEBJ25
- NEBJ21R
- NEBJ21C
- NEBJ21
- NEB-D
- NEB21R
- NEB1R
- NEA016
- NEA005
- NE97833-T1B-A
- NE97833-T1-A
- NE97833-T1
- NE97833-A
- NE97833
- NE97733-T1B-A
- NE97733-T1-A
- NE97733-T1
- NE97733-A
- NE97733
- NE962R575
- NE961R500
- NE961R200
- NE960R575_01
- NE960R575
- NE960R500
- NE960R5
- NE960R275_01
- NE960R275
- NE960R200
- NE-96
- NE94433-T44-A
- NE94433-T43-A
- NE94433-T1-T43
- NE94433-T1B-T44-A
- NE94433-T1B-T43-A
- NE94433-T1B-A
- NE94433-T1B
- NE94433-A
- NE94433
- NE94432
- NE94430-T44-A
- NE94430-T2
- NE94430-T1-A
- NE94430-T1
- NE94430-A
- NE94430
- NE944
- NE93339-T2
- NE93339
- NE9002
- NE9001
- NE9000
- NE8MX-B
- NE8MX6
- NE8MX-1
- NE8MX
- NE8MC-B
- NE8MC-1
- NE8MC
- NE8FDV
- NE8FDP
- NE8FBV
- NE8FBH
- NE8FAV
- NE8FAH
- NE85639
NE960R2数据表相关新闻
NE8FDP-B-TOP
NE8FDP-B-TOP
2024-6-28NEO-F10T-00B
进口代理
2024-2-27NEO-F10N-00B
进口代理
2024-2-27NEMEME001
NEMEME001
2023-3-16NE57811-先进的DDR内存，关闭终端电源
描述 NE57811目的是提供一个终止的权力双数据速率（DDR）SDRAM内存总线。它显着减少元件数量，电路板空间和整体系统成本比以前的解决方案。NE57811 DDR终端稳压器维持输出RAM的电压（DDR参考总线电压）的一半，电源电压。它是能够提供高达± 3.5一个持续时期。过流限制保护从浪涌NE57811启动电流和过热关断保护在极端温度情况下的设备。SPAK - 5（SOT756）包热强大的灵活性散热设计。由于NE57811是一个线性稳压器，没有外部电感器或开关场效应管是必要的。响应速度快负载的变化，降低输出电容器的需求。 特点
2013-1-14NE56631-30D-低有效的系统复位
NE56631- XX是一个家庭的低有效，上电复位内提供±3％及超精密的阈值电压检测低工作电源电流通常为1.5毫安。几种检测阈值电压可在1.9 V，2.0 V，为2.7 V，2.8 V，2.9 V，3.0 V，3.1 V，4.2 V，4.3 V，4.4 V，4.5 V，4.6 V。根据要求提供其它阈值从100 mV的步长1.9 V至4.6 V。随着它的超低电源电流和高精密电压阈值NE56631- XX的检测能力，非常适合各种如复位逻辑电路和电池供电应用微处理器，电压检查和检测水平。 应用 •复位微处理器和逻辑电路 •电压
2012-11-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
