型号 功能描述 生产厂家 企业 LOGO 操作
NE8500200

2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorpo

NEC

瑞萨

NE8500200

GaAs MES FET

DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorp

RENESAS

瑞萨

NE8500200

2 WATT C-BAND POWER GaAs MESFET

文件:60.23 Kbytes Page:6 Pages

NEC

瑞萨

NE8500200

2 WATT C-BAND POWER GaAs MESFET

文件:61.08 Kbytes Page:6 Pages

CEL

GaAs MES FET

DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorp

RENESAS

瑞萨

2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorpo

NEC

瑞萨

GaAs MES FET

DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorp

RENESAS

瑞萨

2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorpo

NEC

瑞萨

NE8500200产品属性

  • 类型

    描述

  • 型号

    NE8500200

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

更新时间:2025-11-19 20:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
2016+
SOT423
15200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
20+
SOT423
49000
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
24+
NA/
15200
优势代理渠道,原装正品,可全系列订货开增值税票
CEL
24+
原厂原封
4000
原装正品
ZXV
20+
SOT-523
90000
原装现货支持BOM配单服务
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
NEC
25+
SOP-8
18000
原厂直接发货进口原装
NECELECTRON
6000
面议
19
DIP/SMD
NEC
23+
TO-59
8510
原装正品代理渠道价格优势
RENESAS
2511
SOT423
15200
电子元器件采购降本30%!原厂直采,砍掉中间差价

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