DESCRIPTION

The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W

partially matched devices. Each packaged device has an input lumped element matching network.

NE8500200 is the six-cells recessed gate chip used in ‘95’ package.

The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

has a PHS. (Plated Heat Sink)

NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.

FEATURES

• Class A operation

• High power output

• High reliability