位置:首页 > IC中文资料第6582页 > NE6500379
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
NE6500379 | 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per | NEC 瑞萨 | ||
3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per | NEC 瑞萨 | |||
3W, L/S-BAND MEDIUM POWER GaAs MESFET DESCRIPTION NECs NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability | CEL California Eastern Labs | |||
N-CHANNEL GaAs MES FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent dis | RENESAS 瑞萨 | |||
N-CHANNEL GaAs MES FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent dis | RENESAS 瑞萨 | |||
3W, L/S-BAND MEDIUM POWER GaAs MESFET DESCRIPTION NECs NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability | CEL California Eastern Labs | |||
3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per | NEC 瑞萨 |
NE6500379产品属性
- 类型
描述
- 型号
NE6500379
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
3W L, S-BAND POWER GaAs MESFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
原装 |
1923+ |
原厂封装 |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
|||
NEC |
23+ |
3M |
50000 |
全新原装正品现货,支持订货 |
|||
CEL |
22+ |
3M |
9000 |
原厂渠道,现货配单 |
|||
24+ |
十字架 |
3000 |
公司存货 |
||||
NEC |
21+ |
3M |
20000 |
全新原装 公司现货 价优 |
|||
NEC |
04+PB |
3M |
776 |
||||
NEC |
23+ |
26520 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
2023+ |
4/STM-86 |
3000 |
进口原装现货 |
||||
NEC |
23+ |
十字架 |
615 |
全新原装正品现货,支持订货 |
NE6500379规格书下载地址
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2012-11-18
DdatasheetPDF页码索引
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