位置：首页 > IC中文资料第974页 > NE425S01
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE425S01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = | NEC 瑞萨 |   | |
NE425S01 | C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. NECs stringent quality assurance and test procedures assure the high | CEL | | |
NE425S01 | C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：51.24 Kbytes Page：5 Pages | NEC 瑞萨 | | |
NE425S01 | C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | CEL | | |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. NECs stringent quality assurance and test procedures assure the high | CEL | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = | NEC 瑞萨 | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = | NEC 瑞萨 | | ||
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. NECs stringent quality assurance and test procedures assure the high | CEL | | ||
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：51.24 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：51.24 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：51.24 Kbytes Page：5 Pages | NEC 瑞萨 | |
NE425S01产品属性
- 类型
描述
- 型号
NE425S01
- 功能描述
射频GaAs晶体管 Super Lo Noise HJFET
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SO86 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
NEC |
24+ |
SO86 |
5000 |
全新原装正品,现货销售 |
|||
RENESAS |
2511 |
十字架 |
1740 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
22+ |
十字架 |
20000 |
公司只做原装 品质保障 |
|||
NEC |
25+ |
SMT |
18202 |
NEC原装特价NE425S01即刻询购立享优惠#长期有货 |
|||
NEC |
25+ |
SO86 |
26200 |
原装现货,诚信经营! |
|||
NEC |
24+ |
SO86 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
23+ |
SMD |
26000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
2450+ |
SOT89 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
NEC |
2023+ |
SO86 |
50000 |
原装现货 |
NE425S01芯片相关品牌
NE425S01规格书下载地址
NE425S01参数引脚图相关
- p800
- p600
- otl功率放大器
- opa642
- opa2604
- op37
- op07中文资料
- op07
- OLED显示屏
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- NE5044N
- NE5044D
- NE5044
- NE5037N
- NE5037
- NE5020N
- NE5020F
- NE5020
- NE5019N
- NE5019F
- NE5019D
- NE5019
- NE5018
- NE5008
- NE46234
- NE46134
- NE46100
- NE4558N
- NE4558D
- NE4558
- NE4548D
- NE4503S01-T1-A
- NE4503S01-A
- NE450184C-T1-A
- NE450184C-D-T1A
- NE450184C-D-T1
- NE-45
- NE45
- NE434S01-T1B
- NE434S01-T1
- NE434S01_98
- NE434S01
- NE429M01-T1
- NE429M01
- NE425S01-T1B-A
- NE425S01-T1B
- NE425S01-T1
- NE425S01_98
- NE42484A
- NE4211M01
- NE4210S01-T1B-A
- NE4210S01-T1B
- NE4210S01T1B
- NE4210S01-T1
- NE4210S01-A
- NE4210S01
- NE4210M01-T1
- NE4210M01
- NE-42
- NE41635
- NE41632-2
- NE41632-1
- NE41620
- NE41615
- NE41612-1
- NE41612
- NE41607
- NE41603
- NE416
- NE41137
- NE38018
- NE34018
- NE33284
- NE33200
- NE32900
- NE32584
- NE32500
- NE32400
- NE32084
- NE32000
- NE27200
- NE25339
- NE25337
- NE25139
- NE25137
- NE25118
- NE24200
- NE23383
NE425S01数据表相关新闻
NE5532ADR
NE5532ADR
2023-4-14NE5532DRG4 TI/德州仪器 21+ SOP8
https://hfx03.114ic.com/
2022-2-19NE5532DR原装热卖库存
型号： NE5532DR 制造商 Texas Instruments 制造商零件编号 NE5532DR 描述 IC OPAMP GP 2 CIRCUIT 8SOIC 对无铅要求的达标情况/对限制有害物质指令(RoHS)规范的达标情况 无铅/符合限制有害物质指令(RoHS3)规范要求 ?湿气敏感性等级 （MSL） 1（无限） 详细描述 通用-放大
2021-12-6NE3512S02-T1DNE3512S02-T1C
NE3512S02-T1C，全新原装当天发货或门市自取0755-82732291. NE3512S02-T1D
2019-12-17NE3512S02-T1D
NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291.
2019-12-17NE3512S02-T1D
NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291，
2019-3-22
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
