DESCRIPTION

The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications.

NECs stringent quality assurance and test procedures assure the highest reliability and performance.

FEATURES

• SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz

• HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz

• GATE LENGTH: ≤ 0.20 µm

• GATE WIDTH: 200 µm

• LOW COST PLASTIC PACKAGE