位置：首页 > IC中文资料第10276页 > NE334S01-T1B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE334S01-T1B | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE | NEC 瑞萨 |   | |
NE334S01-T1B | C BAND SUPER LOW NOISE HJ FET 文件：46.12 Kbytes Page：6 Pages | NEC 瑞萨 | | |
NE334S01-T1B | C BAND SUPER LOW NOISE HJ FET 文件：46.97 Kbytes Page：6 Pages | CEL | | |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE | NEC 瑞萨 | | ||
C BAND SUPER LOW NOISE HJ FET 文件：46.12 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
C BAND SUPER LOW NOISE HJ FET 文件：46.97 Kbytes Page：6 Pages | CEL | |
NE334S01-T1B产品属性
- 类型
描述
- 型号
NE334S01-T1B
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
C BAND SUPER LOW NOISE HJ FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
|||
NEC |
25+ |
SOT |
996880 |
只做原装,欢迎来电资询 |
|||
SAMSUNG/三星 |
24+ |
BGA |
13718 |
只做原装 公司现货库存 |
|||
NEC |
2008 |
SOT343-4 |
890 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2023+ |
SOT343-4 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
24+ |
500 |
真实现货库存 |
|||||
NEC |
23+ |
SMT86 |
5126 |
全新原装正品现货,支持订货 |
|||
NEC |
23+ |
SOT-343 |
26000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
23+ |
SMT86 |
50000 |
全新原装正品现货,支持订货 |
|||
CEL |
22+ |
SOT343 |
9000 |
原厂渠道,现货配单 |
NE334S01-T1B芯片相关品牌
NE334S01-T1B规格书下载地址
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2021-8-23NE3512S02-T1C-A
NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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2019-3-22
DdatasheetPDF页码索引
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