位置：NE334S01-T1B > NE334S01-T1B详情
NE334S01-T1B中文资料
NE334S01-T1B数据手册规格书PDF详情
DESCRIPTION
The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems.
FEATURES
• VERY LOW NOISE FIGURE:
0.25 dB TYP at 4 GHz
• HIGH ASSOCIATED GAIN:
16.0 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE
NE334S01-T1B产品属性
- 类型
描述
- 型号
NE334S01-T1B
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
C BAND SUPER LOW NOISE HJ FET
更新时间：2025-12-1 13:01:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
SMT86 |
5126 |
全新原装正品现货,支持订货 |
|||
NEC |
23+ |
SMT86 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
24+ |
SO86 |
60000 |
||||
NEC |
25+23+ |
SOT343 |
41588 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
2013 |
SOT |
50000 |
全新 |
|||
NEC |
21+ |
SOT343 |
10000 |
原装现货假一罚十 |
|||
NEC |
24+ |
SOT343 |
598000 |
原装现货假一赔十 |
|||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
|||
NEC |
2008 |
SOT343-4 |
890 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
24+ |
NA/ |
480 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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