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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE334S01-T1 | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE | NEC 瑞萨 |   | |
NE334S01-T1 | C BAND SUPER LOW NOISE HJ FET 文件：46.12 Kbytes Page：6 Pages | NEC 瑞萨 | | |
NE334S01-T1 | C BAND SUPER LOW NOISE HJ FET 文件：46.97 Kbytes Page：6 Pages | CEL | | |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE | NEC 瑞萨 | | ||
C BAND SUPER LOW NOISE HJ FET 文件：46.97 Kbytes Page：6 Pages | CEL | | ||
C BAND SUPER LOW NOISE HJ FET 文件：46.12 Kbytes Page：6 Pages | NEC 瑞萨 | |
NE334S01-T1产品属性
- 类型
描述
- 型号
NE334S01-T1
- 功能描述
射频GaAs晶体管 Low Noise HJ FET
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
1993 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
24+ |
SMT86 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
24+ |
SMT86 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
06+ |
SMT86 |
15 |
||||
NEC |
25+23+ |
SMT86 |
6738 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
24+ |
SMT86 |
8950 |
BOM配单专家,发货快,价格低 |
|||
24+ |
500 |
真实现货库存 |
|||||
NEC |
24+ |
SMT |
5000 |
全新原装正品,现货销售 |
|||
NEC |
24+ |
SMT86 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
2447 |
SMT86 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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NE334S01-T1规格书下载地址
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NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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