位置：首页 > IC中文资料第6650页 > NE33284A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE33284A | LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NE33284A | SUPERLOWNOISEHJFET 文件：53.26 Kbytes Page：5 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SUPERLOWNOISEHJFET 文件：54.23 Kbytes Page：5 Pages | CEL California Eastern Laboratories |  | | |
LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SUPERLOWNOISEHJFET 文件：53.26 Kbytes Page：5 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SUPERLOWNOISEHJFET 文件：53.26 Kbytes Page：5 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SUPERLOWNOISEHJFET 文件：54.23 Kbytes Page：5 Pages | CEL California Eastern Laboratories | | | |
SUPERLOWNOISEHJFET 文件：54.23 Kbytes Page：5 Pages | CEL California Eastern Laboratories | | | |
SUPERLOWNOISEHJFET 文件：53.26 Kbytes Page：5 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HIGHPERFORMANCEOPERATIONALAMPLIFIERS LowInputOffset,HighSlewRate,WideBandwidth,JFETInputOperationalAmplifies TheMC33282/284seriesofhighperformanceoperationalamplifiersarequalityfabricatedwithinnovativebipolarandJFETdesignconcepts.ThisdualandquadamplifierseriesincorporatesJFETinputsalongwith | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
NE33284A产品属性
- 类型
描述
- 型号
NE33284A
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
NA/ |
190 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
2016+ |
SMT36 |
858 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
SMT36 |
245 |
|||||
NEC |
SMT36 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
NEC |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
NEC |
1742+ |
SMT36 |
98215 |
只要网上有绝对有货!只做原装正品! |
|||
NEC |
2022 |
SMT |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
NEC |
22+ |
SMT |
3000 |
原装正品,支持实单 |
|||
NEC |
SMT36 |
265209 |
假一罚十原包原标签常备现货! |
||||
NEC-日本电气 |
24+25+/26+27+ |
SMT-36 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
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NE33284A规格书下载地址
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NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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2019-3-22
DdatasheetPDF页码索引
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