位置：首页 > IC中文资料第6650页 > NE33284A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE33284A | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 |   | |
NE33284A | SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | |
NE33284A | SUPER LOW NOISE HJ FET | RENESAS 瑞萨 | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | ||
SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
HIGH PERFORMANCE OPERATIONAL AMPLIFIERS Low Input Offset, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifies The MC33282/284 series of high performance operational amplifiers are quality fabricated with innovative bipolar and JFET design concepts. This dual and quad amplifier series incorporates JFET inputs along with | ONSEMI 安森美半导体 | |
NE33284A产品属性
- 类型
描述
- 型号
NE33284A
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SO86 |
200 |
||||
NEC |
24+ |
SMT86 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
23+ |
SMT36 |
496 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
23+ |
26000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
NEC |
2447 |
SMT86 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
23+ |
SMT |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
22+ |
SMT |
3000 |
原装正品,支持实单 |
|||
NEC |
21+ |
SMT36 |
10000 |
原装现货假一罚十 |
|||
NEC |
24+ |
SMT86 |
9860 |
原装现货/放心购买 |
|||
NEC |
21+ |
SMT86 |
6000 |
全新原装 现货 价优 |
NE33284A芯片相关品牌
NE33284A规格书下载地址
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NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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2019-3-22
DdatasheetPDF页码索引
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