位置：首页 > IC中文资料第6650页 > NE33284A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE33284A | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 |   | |
NE33284A | SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | |
NE33284A | SUPER LOW NOISE HJ FET | RENESAS 瑞萨 | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | ||
SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
HIGH PERFORMANCE OPERATIONAL AMPLIFIERS Low Input Offset, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifies The MC33282/284 series of high performance operational amplifiers are quality fabricated with innovative bipolar and JFET design concepts. This dual and quad amplifier series incorporates JFET inputs along with | ONSEMI 安森美半导体 | |
NE33284A产品属性
- 类型
描述
- 型号
NE33284A
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
NA |
12000 |
全新原装假一赔十 |
|||
NEC |
2016+ |
SMT36 |
858 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
SMT36 |
245 |
|||||
NEC |
25+ |
2789 |
全新原装自家现货!价格优势! |
||||
NEC |
23+ |
SMT86 |
65480 |
||||
CEL |
24+ |
原厂原封 |
2500 |
原装正品 |
|||
NEC |
22+ |
SMT |
3000 |
原装正品,支持实单 |
|||
NE3210S01 |
25+ |
125 |
125 |
||||
NE |
2407+ |
TSSOP |
7750 |
原装现货!实单直说!特价! |
|||
NEC(日电) |
25+ |
SMT36 |
15000 |
NE33284A规格书下载地址
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DdatasheetPDF页码索引
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