L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also

L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also

SUPER LOW NOISE HJ FET

文件：54.23 Kbytes Page：5 Pages

L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also

SUPER LOW NOISE HJ FET

文件：53.26 Kbytes Page：5 Pages

HIGH PERFORMANCE OPERATIONAL AMPLIFIERS

Low Input Offset, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifies The MC33282/284 series of high performance operational amplifiers are quality fabricated with innovative bipolar and JFET design concepts. This dual and quad amplifier series incorporates JFET inputs along with