位置：首页 > IC中文资料第813页 > NE33284A-T1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE33284A-T1 | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 |   | |
NE33284A-T1 | SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | |
NE33284A-T1 | SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | |
NE33284A-T1产品属性
- 类型
描述
- 型号
NE33284A-T1
- 功能描述
MOSFET DISC BY CEL 01/02 84AS LO-NOISE HJ FET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
25+ |
SMT36 |
18191 |
NEC原装特价NE33284A-T1-A即刻询购立享优惠#长期有货 |
|||
NEC |
22+ |
SMT |
3000 |
原装正品,支持实单 |
|||
NEC |
2016+ |
SMT36 |
858 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2023+ |
SMT36 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
24+ |
SO86 |
200 |
||||
NEC |
24+ |
SMT86 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
2023+ |
SMT86 |
3848 |
十五年行业诚信经营,专注全新正品 |
|||
NEC |
23+ |
SMT36 |
869 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
23+ |
26000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
NEC |
2447 |
SMT86 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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NE33284A-T1规格书下载地址
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NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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