位置：首页 > IC中文资料第813页 > NE33284A-T1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE33284A-T1 | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 |   | |
NE33284A-T1 | SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | |
NE33284A-T1 | SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | |
NE33284A-T1产品属性
- 类型
描述
- 型号
NE33284A-T1
- 功能描述
MOSFET DISC BY CEL 01/02 84AS LO-NOISE HJ FET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
190 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
2016+ |
SMT36 |
858 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
25+ |
SMT36 |
18191 |
NEC原装特价NE33284A-T1-A即刻询购立享优惠#长期有货 |
|||
NEC |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
NEC |
22+ |
SMT86 |
12245 |
现货,原厂原装假一罚十! |
|||
NEC |
21+ |
SMT86 |
3848 |
||||
NEC |
SMT36 |
245 |
|||||
NEC |
2450+ |
SMT |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
NEC |
2023+ |
SMT86 |
3848 |
十五年行业诚信经营,专注全新正品 |
|||
NEC |
25+23+ |
SMT86 |
6738 |
绝对原装正品全新进口深圳现货 |
NE33284A-T1规格书下载地址
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NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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