位置：首页 > IC中文资料第6650页 > NE33284
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE33284 | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 |   | |
NE33284 | SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | |
NE33284 | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | RENESAS 瑞萨 | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET | RENESAS 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | ||
SUPER LOW NOISE HJ FET 文件：53.26 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：54.23 Kbytes Page：5 Pages | CEL | | ||
HIGH PERFORMANCE OPERATIONAL AMPLIFIERS Low Input Offset, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifies The MC33282/284 series of high performance operational amplifiers are quality fabricated with innovative bipolar and JFET design concepts. This dual and quad amplifier series incorporates JFET inputs along with | ONSEMI 安森美半导体 | |
NE33284产品属性
- 类型
描述
- 型号
NE33284
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
25+ |
SMT36 |
10000 |
原装现货假一罚十 |
|||
NEC |
SMT36 |
245 |
|||||
NEC |
2450+ |
SMT |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
NEC |
24+ |
SMT36 |
598000 |
原装现货假一赔十 |
|||
NEC(日电电子) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
NEC |
25+ |
SMT36 |
18191 |
NEC原装特价NE33284A-T1-A即刻询购立享优惠#长期有货 |
|||
NEC |
2016+ |
SMT36 |
858 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2023+ |
SMT36 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
2023+ |
SMT36 |
5800 |
进口原装,现货热卖 |
|||
NEC |
23+ |
SMT36 |
869 |
全新原装正品现货,支持订货 |
NE33284规格书下载地址
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2021-8-23NE3512S02-T1C-A
NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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NE3512，全新原装当天发货或门市自取0755-82732291，
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DdatasheetPDF页码索引
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