CABLE CLAMPS, PLASTISOL DIPPED

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包装：散装 描述：CBL CLAMP P-TYPE FASTENER 电缆，电线 - 管理 电缆支撑与紧固件

Near edge thermal printhead (8 dots / mm)

The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medium passes straight through,suited for card printers. Features 1) Inclined toward the printing surface to provide excellent printing quality even for cards and thick paper. 2) Prints directly on printing medium th

Near edge thermal printhead (8 dots / mm)

The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medium passes straight through,suited for card printers. Features 1) Inclined toward the printing surface to provide excellent printing quality even for cards and thick paper. 2) Prints directly on printing medium th

Near edge thermal printhead (8 dots / mm)

The NE2002–VA10A is a near edge thin–film thermal printhead, where the printing medium passes straight through at printing speeds up to 10 inch / second. It is suited for high–speed label printers. Features 1) Inclined toward the printing surface to provide excellent printing quality even for ca

Near edge thin film thermal printhead (8 dots / mm)

The NE2004–VA10A is a near edge thin–film thermal printhead, where the printing medium passes straight through at printing speeds up to 10 inch / second. It is suited for high–speed label printers. Features 1) Inclined toward the printing surface to provide excellent printing quality even for ca

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

Near edge thermal printhead (8 dots / mm)

Near edge thin film thermal printhead (8 dots / mm)

模块电源

HETERO JUNCTION FIELD EFFECT TRANSISTOR

文件：570.73 Kbytes Page：8 Pages

Silicon NPN Epitaxial High Frequency Transistor

文件：228.55 Kbytes Page：8 Pages

封装/外壳：SC-70，SOT-323 包装：散装 描述：RF TRANS NPN 6V 11GHZ 3SMINMOLD 分立半导体产品 晶体管 - 双极（BJT）- 射频