ULTRA LOW NOISE K BAND HETERO JUNCTION FET

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

Silicon NPN Epitaxial High Frequency Transistor

FEATURES\n• High transition frequency fT = 11 GHz TYP.\n• Ideal for low noise and low distortion amplification\n• Suitable for equipments of low collector voltage (Less than 5 V)\n• Suitable for up to 1 GHz applications\nAPPLICATIONS\n• LNA (Low Noise Amplifier) or power splitter for digital-TV

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

Silicon NPN Epitaxial High Frequency Transistor

FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications ​​​​​​​ APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

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ULTRA LOW NOISE K-BAND HETERO JUNCTION FET

Silicon NPN Epitaxial High Frequency Transistor

文件：228.55 Kbytes Page：8 Pages

封装/外壳：SC-70，SOT-323 包装：散装 描述：RF TRANS NPN 6V 11GHZ 3SMINMOLD 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-70，SOT-323 包装：散装 描述：RF TRANS NPN 6V 11GHZ SOT323 分立半导体产品 晶体管 - 双极（BJT）- 射频

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 2.0 Amperes)

FEATURES ● Superfast recovery times-epitaxial construction ● Low forward voltage, high current capability ● Exceeds environmental standards of MIL-S-19500/228 ● Hermetically sealed ● Low leakage ● High surge capability ● Plastic package has Underwriters Laboratories Flammability Classificat

IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating : 60 Amperes peak

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES High current capability Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound 2.0 ampere operation at TA =55 ¢J with no thermal runaway

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switching for high efficiency. • In