位置：首页 > IC中文资料第6477页 > NE202930
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE202930 | SiliconNPNEpitaxialHighFrequencyTransistor FEATURES •HightransitionfrequencyfT=11GHzTYP. •Idealforlownoiseandlowdistortionamplification •Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) •Suitableforupto1GHzapplications APPLICATIONS •LNA(LowNoiseAmplifier)orpowersplitterfordigi | CEL California Eastern Labs |  |   |
NE202930 | SiliconNPNEpitaxialHighFrequencyTransistor FEATURES •HightransitionfrequencyfT=11GHzTYP. •Idealforlownoiseandlowdistortionamplification •Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) •Suitableforupto1GHzapplications APPLICATIONS •LNA(LowNoiseAmplifier)orpowersplitterfordigi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | |
SiliconNPNEpitaxialHighFrequencyTransistor FEATURES •HightransitionfrequencyfT=11GHzTYP. •Idealforlownoiseandlowdistortionamplification •Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) •Suitableforupto1GHzapplications APPLICATIONS •LNA(LowNoiseAmplifier)orpowersplitterfordigi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNPNEpitaxialHighFrequencyTransistor FEATURES •HightransitionfrequencyfT=11GHzTYP. •Idealforlownoiseandlowdistortionamplification •Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) •Suitableforupto1GHzapplications APPLICATIONS •LNA(LowNoiseAmplifier)orpowersplitterfordigi | CEL California Eastern Labs | | | |
SiliconNPNEpitaxialHighFrequencyTransistor FEATURES •HightransitionfrequencyfT=11GHzTYP. •Idealforlownoiseandlowdistortionamplification •Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) •Suitableforupto1GHzapplications APPLICATIONS •LNA(LowNoiseAmplifier)orpowersplitterfordigi | CEL California Eastern Labs | | | |
SiliconNPNEpitaxialHighFrequencyTransistor 文件：228.55 Kbytes Page：8 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：SC-70，SOT-323 包装：散装 描述：RF TRANS NPN 6V 11GHZ 3SMINMOLD 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL California Eastern Labs | | | |
封装/外壳：SC-70，SOT-323 包装：散装 描述：RF TRANS NPN 6V 11GHZ SOT323 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL California Eastern Labs | | |
NE202930产品属性
- 类型
描述
- 型号
NE202930
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon NPN Epitaxial High Frequency Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
4750 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
23+ |
原厂封装 |
8293 |
||||
JRC/新日本无线 |
23+ |
SOP-14 |
25995 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
RENESAS/瑞萨 |
24+ |
SOT-323 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ZARLINK |
22+ |
SOP20 |
3000 |
原装正品,支持实单 |
|||
nec |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
6000 |
面议 |
19 |
SOP28 |
||||
NEC |
31 |
公司优势库存 热卖中! |
|||||
RENESAS/瑞萨 |
2019+ |
SOT-323 |
78550 |
原厂渠道 可含税出货 |
|||
PLX |
24+ |
BGA |
43200 |
郑重承诺只做原装进口现货 |
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NE202930规格书下载地址
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DdatasheetPDF页码索引
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