位置：首页 > IC中文资料第6477页 > NE202930
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE202930 | Silicon NPN Epitaxial High Frequency Transistor FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi | CEL |   | |
NE202930 | Silicon NPN Epitaxial High Frequency Transistor FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi | RENESAS 瑞萨 | | |
NE202930 | Silicon NPN Epitaxial High Frequency Transistor FEATURES\n• High transition frequency fT = 11 GHz TYP.\n• Ideal for low noise and low distortion amplification\n• Suitable for equipments of low collector voltage (Less than 5 V)\n• Suitable for up to 1 GHz applications\nAPPLICATIONS\n• LNA (Low Noise Amplifier) or power splitter for digital-TV | CEL | | |
Silicon NPN Epitaxial High Frequency Transistor FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial High Frequency Transistor FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi | CEL | | ||
Silicon NPN Epitaxial High Frequency Transistor FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digi | CEL | | ||
Silicon NPN Epitaxial High Frequency Transistor 文件：228.55 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
封装/外壳：SC-70，SOT-323 包装：散装 描述：RF TRANS NPN 6V 11GHZ 3SMINMOLD 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
封装/外壳：SC-70，SOT-323 包装：散装 描述：RF TRANS NPN 6V 11GHZ SOT323 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | |
NE202930产品属性
- 类型
描述
- 型号
NE202930
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon NPN Epitaxial High Frequency Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZARLINK |
22+ |
SOP20 |
3000 |
原装正品,支持实单 |
|||
NEC |
25+ |
31 |
公司优势库存 热卖中! |
||||
RENESAS/瑞萨 |
2019+ |
SOT-323 |
78550 |
原厂渠道 可含税出货 |
|||
HARRIS |
24+ |
SMD |
3000 |
公司存货 |
|||
PLX |
24+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
16+ |
QFP |
2500 |
进口原装现货/价格优势! |
|||
RENESAS/瑞萨 |
22+ |
SOT-323 |
20000 |
只做原装 |
|||
GPS |
23+ |
SSOP |
65480 |
||||
GPS |
20+ |
SOP16 |
2960 |
诚信交易大量库存现货 |
|||
PLX |
0727+ |
BGA |
4 |
只做原装正品 |
NE202930规格书下载地址
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DdatasheetPDF页码索引
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