N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching perf

N-Channel 100-V (D-S) MOSFET

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

Celeron M Processor on 65 nm Process

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Heavy-Duty Hydra-Lift Karriers

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Detectable Buried Barricade Tapes 400 Series

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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