LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

Celeron M Processor on 65 nm Process

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Detectable Buried Barricade Tapes 400 Series

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Heavy-Duty Hydra-Lift Karriers

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