isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS • Designed for medium to high voltage inverters, converters, regulators and switching circuits.

High Voltage NPN Silicon Transistors

. . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector-Emitter Voltage— VCEO = 200 Volts • DC Current Gain Specified @ 1 .0 and 2.5 Adc • LowCollector-Emitter Saturation Voltage — VCE(sat) = 0.8 Vdc @ lc = 1 .0 Adc

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High collector-emitter voltage • Low collector saturation voltage APPLICATIONS • Designed for medium to high voltage inverters, converters, regulators and switching circuits.

Silicon NPN Power Transistors

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