5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS • Designed for medium to high voltage inverters, converters, regulators and switching circuits.

High Voltage NPN Silicon Transistors

. . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector-Emitter Voltage— VCEO = 200 Volts • DC Current Gain Specified @ 1 .0 and 2.5 Adc • LowCollector-Emitter Saturation Voltage — VCE(sat) = 0.8 Vdc @ lc = 1 .0 Adc

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High collector-emitter voltage • Low collector saturation voltage APPLICATIONS • Designed for medium to high voltage inverters, converters, regulators and switching circuits.

Silicon NPN Power Transistors

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三极管

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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