Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

封装/外壳：TO-247-2 包装：管件 描述：SIC JBS 1700V 25A TO247 分立半导体产品 二极管 - 整流器 - 单

碳化硅（SiC）肖特基二极管 - EliteSiC系列25A 1700V D1 TO-247-2L封装

Silicon Carbide Schottky Diode 1700 V, 25 A

文件：286.26 Kbytes Page：6 Pages

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

Silicon Carbide Schottky Diode 1700 V, 25 A

文件：286.26 Kbytes Page：6 Pages

Customer Specification

Construction Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA (25742), Web: www.alphawire.com Diameters (In) 1) Component 1 10 X 1 COND a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079 (1) Color Code Alpha Wire Color Code

0.5-10 GHz Low Noise Gallium Arsenide FET

Description The ATF-25170 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range. This GaAs FET

BQ25170: 800-mA Linear Battery Charger for 1-Cell Li-Ion, and LiFePO4

文件：556.04 Kbytes Page：10 Pages

BQ25170: 800-mA Linear Battery Charger for 1-Cell Li-Ion, and LiFePO4

文件：556.04 Kbytes Page：10 Pages

BQ25170J : 800-mA JEITA-Compliant Linear Battery Charger for 1-Cell Li-Ion, Li-Polymer, and LiFePO4

文件：3.29378 Mbytes Page：33 Pages