0.5-10 GHz Low Noise Gallium Arsenide FET

Description The ATF-25170 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range. This GaAs FET

0.5-10 GHz Low Noise Gallium Arsenide FET

SPI Serial E 2 PROM with Block Lock ??Protection

DESCRIPTION The X25170 is a CMOS 16384-bit serial E2PROM, internally organized as 2K x 8. The X25170 features a Serial Peripheral Interface (SPI) and software protocol, allowing operation on a simple three-wire bus. FEATURES • 5MHz Clock Rate • SPI Modes (0,0 & 1,1) • 2K X 8 Bits —3

SPI Serial E 2 PROM with Block Lock ??Protection

DESCRIPTION The X25170 is a CMOS 16384-bit serial E2PROM, internally organized as 2K x 8. The X25170 features a Serial Peripheral Interface (SPI) and software protocol, allowing operation on a simple three-wire bus. FEATURES • 5MHz Clock Rate • SPI Modes (0,0 & 1,1) • 2K X 8 Bits —3

SPI Serial E 2 PROM with Block Lock ??Protection

DESCRIPTION The X25170 is a CMOS 16384-bit serial E2PROM, internally organized as 2K x 8. The X25170 features a Serial Peripheral Interface (SPI) and software protocol, allowing operation on a simple three-wire bus. FEATURES • 5MHz Clock Rate • SPI Modes (0,0 & 1,1) • 2K X 8 Bits —3

SPI Serial E 2 PROM with Block Lock ??Protection

DESCRIPTION The X25170 is a CMOS 16384-bit serial E2PROM, internally organized as 2K x 8. The X25170 features a Serial Peripheral Interface (SPI) and software protocol, allowing operation on a simple three-wire bus. FEATURES • 5MHz Clock Rate • SPI Modes (0,0 & 1,1) • 2K X 8 Bits —3