0.5-10 GHz Low Noise Gallium Arsenide FET

Description The ATF-25170 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range. This GaAs FET

0.5-10 GHz Low Noise Gallium Arsenide FET

Customer Specification

Construction Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA (25742), Web: www.alphawire.com Diameters (In) 1) Component 1 10 X 1 COND a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079 (1) Color Code Alpha Wire Color Code

BQ25170: 800-mA Linear Battery Charger for 1-Cell Li-Ion, and LiFePO4

文件：556.04 Kbytes Page：10 Pages

BQ25170: 800-mA Linear Battery Charger for 1-Cell Li-Ion, and LiFePO4

文件：556.04 Kbytes Page：10 Pages

BQ25170J : 800-mA JEITA-Compliant Linear Battery Charger for 1-Cell Li-Ion, Li-Polymer, and LiFePO4

文件：3.29378 Mbytes Page：33 Pages