Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS

30V P-Channel PowerTrench MOSFET

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30V P-Channel PowerTrench MOSFET

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P-Channel 30-V (D-S) MOSFET

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SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

MACHINE SCREW PAN PHILLIPS 10-32

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20V P-Channel Increased MOS FET

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P-Channel 30-V (D-S) MOSFET

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