Bipolar Power Transistors

Bipolar Power Transistors PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Sat

Bipolar Power Transistors PNP Silicon

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Bipolar Power Transistors PNP Silicon

文件：89.33 Kbytes Page：6 Pages

Bipolar Power Transistors PNP Silicon

文件：89.33 Kbytes Page：6 Pages

封装/外壳：TO-261-4，TO-261AA 包装：管件 描述：TRANS PNP 30V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：托盘 描述：TRANS PNP 30V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Power Transistors PNP Silicon

文件：89.33 Kbytes Page：6 Pages

Bipolar Power Transistors PNP Silicon

文件：89.33 Kbytes Page：6 Pages

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

MACHINE SCREW PAN PHILLIPS 10-32

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20V P-Channel Increased MOS FET

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P-Channel 30-V (D-S) MOSFET

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