Bipolar Power Transistors

Bipolar Power Transistors PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Sat

Bipolar Power Transistors PNP Silicon

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PNP 双极功率晶体管

Bipolar Power Transistors PNP Silicon

文件：89.33 Kbytes Page：6 Pages

Bipolar Power Transistors PNP Silicon

文件：89.33 Kbytes Page：6 Pages

封装/外壳：TO-261-4，TO-261AA 包装：管件 描述：TRANS PNP 30V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：托盘 描述：TRANS PNP 30V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Power Transistors PNP Silicon

文件：89.33 Kbytes Page：6 Pages

Bipolar Power Transistors PNP Silicon

文件：89.33 Kbytes Page：6 Pages

P-Channel Enhancement Mode MOSFET

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features · –5.3 A, –30 V RDS(ON) = 50

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS

P-Channel Logic Level PowerTrench MOSFET

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