Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa