Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes

Card Edge Connectors 0.156” (3.96mm) Pitch

Features: • 0.156” (3.96mm) contact spacing x 0.140” (3.56mm) row spacing • Accepts 0.062” (1.57mm) nominal thickness P.C. board • Low profile insulator body, 0.470” (11.94mm) • Contact termination options include P.C. tail, wire hole, extender board bends • Dual row configuration • Large va

3M??Power Clamp Wiremount Socket

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Introducing Full-featured Level Transmitters with a User-friendly Price Point.

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True-rms 2000 A Clamp Meters

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THRU-HOLE THREADED INSERT W/FLANGE

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