isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.4A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.8Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，600V，2.4A，4.8Ω，单 N 沟道，TO-220FP

N-Channel Power MOSFET 600 V, 4.0 

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N-Channel Power MOSFET 600 V, 4.8 

文件：146.41 Kbytes Page：10 Pages

N-Channel Power MOSFET

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N-Channel Power MOSFET

文件：148.07 Kbytes Page：10 Pages

N-Channel Power MOSFET

文件：148.07 Kbytes Page：10 Pages

N-Channel Power MOSFET 600 V, 4.8 

文件：146.41 Kbytes Page：10 Pages

MOSFET N-CH 600V 2.4A TO220FP

N-Channel Power MOSFET 600 V, 4.0 

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Power MOSFET

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N-Channel Power MOSFET 600 V, 4.8 

文件：146.41 Kbytes Page：10 Pages

MOSFET N-CH 600V 2.4A TO220FP

N-Channel Power MOSFET

文件：148.07 Kbytes Page：10 Pages

FAST IGBT IN NPT TECHNOLOGY

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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N CHANNEL ENHANCEMENT MODE

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