FAST IGBT IN NPT TECHNOLOGY

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

分立式IGBT

英飞凌提供庞大的 IGBT 产品组合，解决软开关/谐振和硬开关拓扑。\n  \n   • 较上一代产品能耗降低 30%\n• 短路承受时间 – 10μs\n• 设计用于 30kHz 以上应用\n• 高稳健性和温度稳定性\n• 无铅镀层；符合 RoHS\n• 符合目标应用 JEDEC 标准\n\n优势:;

N-Channel 650 V (D-S) MOSFET

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Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 600V 6A 30W TO252-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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N CHANNEL ENHANCEMENT MODE

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