分立式IGBT

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. ·30% lower E off compared to previous generation\n ·Short circuit withstand time – 10μs\n ·Designed for operation above 30kHz\n ·High ruggedness, temperature stable behaviour\n ·Pb-free lead plating; RoHS compliant\n ·Qualified according to JEDEC for target applications;

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：397.15 Kbytes Page：13 Pages

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：1.15575 Mbytes Page：13 Pages

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：1.15575 Mbytes Page：13 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 6A 30W TO263-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 6A 30W TO263-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

FAST IGBT IN NPT TECHNOLOGY

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

N CHANNEL ENHANCEMENT MODE

文件：701.78 Kbytes Page：6 Pages