Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These dual N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fas

SOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance a

SOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor

Features 0.51A, 50V, RDS(ON) = 2W @ VGS=10V High density cell design for low RDS(ON). Proprietary SOT23-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current.

Field Effect Transistor - Dual, N-Channel, Enhancement Mode

文件：335.81 Kbytes Page：7 Pages

50V Dual N-Channel Enhancement Mode MOSFET

文件：1.66584 Mbytes Page：5 Pages

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

C-band Crossbar/Fan-Out

文件：534.52 Kbytes Page：2 Pages

Male Pins

文件：132.89 Kbytes Page：1 Pages

toggle switches

文件：79.37 Kbytes Page：1 Pages