General Description

These dual N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch.

Features

■ 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V

■ High density cell design for low RDS(ON).

■ Proprietary SuperSOTTM-6 package design using copper

lead frame for superior thermal and electrical capabilities.

■ High saturation current.