General Description

These dual N-Channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been designed to minimize

on-state resistance, provide rugged and reliable

performance and fast switching. These devices is

particularly suited for low voltage applications requiring a

low current high side switch.

Features

0.51A, 50V, RDS(ON) = 2W @ VGS=10V

High density cell design for low RDS(ON).

Proprietary SOT23-6 package design using copper lead

frame for superior thermal and electrical capabilities.

High saturation current.