isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET

N-Channel Power MOSFET

文件：580.66 Kbytes Page：5 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

N-Channel Power MOSFET

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N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.06059 Mbytes Page：6 Pages

N-CHANNEL MOSFET in a TO-263 Plastic Package

文件：893.02 Kbytes Page：6 Pages

OptiMOS?? Power-Transistor

文件：420.84 Kbytes Page：10 Pages