TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

TMOS E-FET™ Power Field Effect transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for h

TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

N-Channel Power MOSFET

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N-CHANNEL MOSFET in a TO-220 Plastic Package

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N-CHANNEL MOSFET in a TO-263 Plastic Package

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OptiMOS?? Power-Transistor

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