型号 功能描述 生产厂家 企业 LOGO 操作
NDB6030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

FAIRCHILD

仙童半导体

NDB6030L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NDB6030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO

STMICROELECTRONICS

意法半导体

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes)

文件:230.18 Kbytes Page:2 Pages

RECTRON

丽正国际

NDB6030L产品属性

  • 类型

    描述

  • 型号

    NDB6030L

  • 功能描述

    MOSFET N-Ch LL FET Enhancement Mode

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-15 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NS
22+
TO-263
3000
原装正品,支持实单
FAIRCHILD
25+
TO263
4500
全新原装、诚信经营、公司现货销售
24+
3000
公司存货
FAIRCHI
24+
SOT263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
FAIRCHILD
22+
SOT263
20000
公司只做原装 品质保障
FAIRCHILD/仙童
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
FAIRCHILD
23+
TRANS
65480
FAIRCHILD
1998
TO263
100
原装现货海量库存欢迎咨询
FAIRCHILD/仙童
2022+
SOT263
12888
原厂代理 终端免费提供样品
FAIRCHILD
23+
SOT263
698
全新原装正品现货,支持订货

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