位置：首页 > IC中文资料第4075页 > APT6030
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT6030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW |   | |
APT6030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | |
APT6030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | APT 晶科 | | |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS TRANSISTORS FEATURE N channel in a plastic TO-3PML package. Compliance to RoHS. | COMSET | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode p | ISC 无锡固电 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
isc N-Channel MOSFET Transistor 文件：420.35 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：142.99 Kbytes Page：4 Pages | ADPOW | | ||
POWER MOS V 600V 21A 0.300 Ohm | APT 晶科 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：142.99 Kbytes Page：4 Pages | ADPOW | | ||
isc N-Channel MOSFET Transistor 文件：420.34 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
POWER MOS V 600V 21A 0.300 Ohm | APT 晶科 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：142.99 Kbytes Page：4 Pages | ADPOW | | ||
Servo-assisted 2/2-way piston valve The valve 6440 is a servo-assisted piston valve. The stopper and the core guide tube are welded together to increase pressure resistance and leak-tightness. The coils are moulded with highly chemically resistant epoxy. Sliding rings increase the service life for dry gases. Cartridge and flange | BURKERT 宝帝流体控制系统 | | ||
PLUGS AND JACKS [KEYSTONE] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Low Power Laser Mouse Bundles Description The Agilent ADNB-6031 and ADNB-6032 low power laser mouse bundles are the world’s first laser-illuminated system enabled for cordless application. Powered by Agilent LaserStream technology, the mouse can operate on many surfaces that proved difficult for traditional LED-based optica | HP 安捷伦 | | ||
Low Power Laser Mouse Sensor 文件：120.41 Kbytes Page：1 Pages | BOARDCOM 博通 | | ||
Low Power Laser Mouse Sensor 文件：120.41 Kbytes Page：1 Pages | AVAGO 安华高 | |
APT6030产品属性
- 类型
描述
- 型号
APT6030
- 功能描述
MOSFET N-CH 600V 21A TO-247
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
POWER MOS V®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
24+ |
NA/ |
3260 |
原装现货,当天可交货,原型号开票 |
|||
APT |
25+ |
TO247 |
7505 |
原装正品,欢迎来电咨询! |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
APT |
07+ |
TO-247 |
105 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APT |
23+ |
TO-3P |
3000 |
专做原装正品,假一罚百! |
|||
APT |
22+ |
TO-247 |
8000 |
原装正品支持实单 |
|||
APT |
2023+ |
TO247 |
8635 |
一级代理优势现货,全新正品直营店 |
|||
MICROCHIP(美国微芯) |
24+ |
TO-247 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
MICROCHIP/微芯 |
2406+ |
33000 |
诚信经营!进口原装!量大价优! |
||||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
APT6030芯片相关品牌
APT6030规格书下载地址
APT6030参数引脚图相关
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- APT6025SVFRG
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APT6030数据表相关新闻
APTD3216LVBC/D
优势渠道
2023-12-26APT32F101H6S6
APT32F101H6S6，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-12APT60GF120JRDQ3
制造商零件编号 APT60GF120JRDQ3 Manufacturer Or OEM Microsemi Corporation 描述 IGBT 1200V 149A 625W SOT227 说明 IGBT Module NPT 单路 1200V 149A 625W 底座安装 ISOTOP? 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 1 标准包装 1
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-20APT50M60JVR 假一罚十
进口原装正品 ，欢迎咨询。
2020-6-29APT8020JFLL
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2019-3-5
DdatasheetPDF页码索引
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