型号 功能描述 生产厂家 企业 LOGO 操作
APT6030

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

APT6030

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

APT6030

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT

晶科

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

ADPOW

N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS TRANSISTORS

FEATURE N channel in a plastic TO-3PML package. Compliance to RoHS.

COMSET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode p

ISC

无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:142.99 Kbytes Page:4 Pages

ADPOW

isc N-Channel MOSFET Transistor

文件:420.35 Kbytes Page:2 Pages

ISC

无锡固电

POWER MOS V 600V 21A 0.300 Ohm

APT

晶科

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:142.99 Kbytes Page:4 Pages

ADPOW

isc N-Channel MOSFET Transistor

文件:420.34 Kbytes Page:2 Pages

ISC

无锡固电

POWER MOS V 600V 21A 0.300 Ohm

APT

晶科

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:142.99 Kbytes Page:4 Pages

ADPOW

PLUGS AND JACKS

[KEYSTONE]

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Servo-assisted 2/2-way piston valve

The valve 6440 is a servo-assisted piston valve. The stopper and the core guide tube are welded together to increase pressure resistance and leak-tightness. The coils are moulded with highly chemically resistant epoxy. Sliding rings increase the service life for dry gases. Cartridge and flange

BURKERT

宝帝流体控制系统

Low Power Laser Mouse Bundles

Description The Agilent ADNB-6031 and ADNB-6032 low power laser mouse bundles are the world’s first laser-illuminated system enabled for cordless application. Powered by Agilent LaserStream technology, the mouse can operate on many surfaces that proved difficult for traditional LED-based optica

HP

安捷伦

Low Power Laser Mouse Sensor

文件:120.41 Kbytes Page:1 Pages

BOARDCOM

博通

Low Power Laser Mouse Sensor

文件:120.41 Kbytes Page:1 Pages

AVAGO

安华高

APT6030产品属性

  • 类型

    描述

  • 型号

    APT6030

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更新时间:2025-9-21 14:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
APT
22+
TO-247
8000
原装正品支持实单
APT
07+
TO-247
105
一级代理,专注军工、汽车、医疗、工业、新能源、电力
APT
21+
TO247
175
原装现货假一赔十
APT
22+
TO-247
6000
十年配单,只做原装
24+
1100
MICROCHIP(美国微芯)
24+
TO-247
7793
支持大陆交货,美金交易。原装现货库存。
MICROCHIP/微芯
2406+
33000
诚信经营!进口原装!量大价优!
APT
23+
MODULE
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择

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