N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

N-Channel Logic Level Enhancement Mode Field Effect Transistor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 46A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

文件：56.17 Kbytes Page：4 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P 沟道逻辑电平增强型场效应晶体管，-30V，-30A，42mΩ

P-Channel 30-V (D-S) MOSFET

文件：967.26 Kbytes Page：8 Pages

TREK 603

TYPICAL APPLICATIONS  Driving piezoelectric actuators  Modulating electrooptics  Electrostatically controlling ion beams  Providing remote ON/OFF capabilities for automated or computer controlled systems

Filter Adapter 603

文件：126.56 Kbytes Page：2 Pages

2A and 5A/50Vdc and 5A/250 Vdc DC Solid-State Relays

文件：518.44 Kbytes Page：3 Pages

횠5.0mm mounting Robust bright nickel plated brass housing

文件：464.15 Kbytes Page：4 Pages

Two Terminal Metal Element Current Sense

文件：119.98 Kbytes Page：1 Pages