N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

N-Channel Logic Level Enhancement Mode Field Effect Transistor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 46A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

P 沟道逻辑电平增强型场效应晶体管，-30V，-30A，42mΩ

P-Channel 30-V (D-S) MOSFET

文件：967.26 Kbytes Page：8 Pages

JUNCTION BOXES - SELECTIVE ENTRY

Brief Description of Products Junction box with cable entries in the side wall that are selectable by alignment of symbols and text on the cover. Features Captive cover fixing screw Slotted terminals allowing for unbroken ring wiring 4 Selective entries in side wall with knockouts allowing

TREK 603

TYPICAL APPLICATIONS  Driving piezoelectric actuators  Modulating electrooptics  Electrostatically controlling ion beams  Providing remote ON/OFF capabilities for automated or computer controlled systems

Filter Adapter 603

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2A and 5A/50Vdc and 5A/250 Vdc DC Solid-State Relays

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횠5.0mm mounting Robust bright nickel plated brass housing

文件：464.15 Kbytes Page：4 Pages