N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TREK 603

TYPICAL APPLICATIONS  Driving piezoelectric actuators  Modulating electrooptics  Electrostatically controlling ion beams  Providing remote ON/OFF capabilities for automated or computer controlled systems

2A and 5A/50Vdc and 5A/250 Vdc DC Solid-State Relays

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횠5.0mm mounting Robust bright nickel plated brass housing

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