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NCP511价格
参考价格:¥2.7942
型号:NCP5111DR2G 品牌:ONSemi 备注:这里有NCP511多少钱,2025年最近7天走势,今日出价,今日竞价,NCP511批发/采购报价,NCP511行情走势销售排行榜,NCP511报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCP511 | 150 mA CMOS Low Iq Low?묭ropout Voltage Regulator 文件:94.81 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | ||
NCP511 | AC-DC Offline Switching Controllers/Regulators 文件:3.80862 Mbytes Page:4 Pages | ONSEMI 安森美半导体 | ||
NCP511 | 150 mA CMOS Low Iq Low-Dropout Voltage Regulator 文件:85.53 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | ||
NCP511 | 150 mA CMOS Low Iq Low-Dropout Voltage Regulator 文件:106.66 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | ||
NCP511 | Linear Voltage Regulator, LDO, CMOS Low Iq, 150 mA | ONSEMI 安森美半导体 | ||
Single 2.6 A, Low-Side Gate Driver with Over Current Protection The NCP51105 is a high current low side gate driver designed to drive Power MOSFET and IGBT. The logic input is compatible with CMOS and TTL output. The NCP51105 has OCP pin to provide over current protection with negative voltage detected across switching current sensing resistor and EN pin t | ONSEMI 安森美半导体 | |||
Single 2.6 A, Low-Side Gate Driver with Over Current Protection The NCP51105 is a high current low side gate driver designed to drive Power MOSFET and IGBT. The logic input is compatible with CMOS and TTL output. The NCP51105 has OCP pin to provide over current protection with negative voltage detected across switching current sensing resistor and EN pin t | ONSEMI 安森美半导体 | |||
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver The NCP51152 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provide | ONSEMI 安森美半导体 | |||
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver The NCP51152 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provide | ONSEMI 安森美半导体 | |||
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver The NCP51152 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provide | ONSEMI 安森美半导体 | |||
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver The NCP51152 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provide | ONSEMI 安森美半导体 | |||
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver The NCP51152 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provide | ONSEMI 安森美半导体 | |||
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver The NCP51152 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provide | ONSEMI 安森美半导体 | |||
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver The NCP51152 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provide | ONSEMI 安森美半导体 | |||
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver The NCP51152 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provide | ONSEMI 安森美半导体 | |||
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver The NCP51152 is a family of isolated single−channel gate driver with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provide | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low?묭ropout Voltage Regulator 文件:94.81 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low-Dropout Voltage Regulator 文件:106.66 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
Single 2 A High-Speed, Low-Side Gate Driver 文件:2.22143 Mbytes Page:16 Pages | ONSEMI 安森美半导体 | |||
Single 2 A High-Speed, Low-Side Gate Driver 文件:2.22143 Mbytes Page:16 Pages | ONSEMI 安森美半导体 | |||
Single 2.6 A, Low-Side Gate Driver with OCP | ONSEMI 安森美半导体 | |||
High Voltage, High and Low Side Driver 文件:124.39 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
High Voltage, High and Low Side Driver 文件:106.24 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
High Voltage, High and Low Side Driver 文件:106.24 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
High Voltage, High and Low Side Driver 文件:106.24 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
High Voltage, High and Low Side Driver 文件:124.39 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路(IC) 栅极驱动器 | ONSEMI 安森美半导体 | |||
封装/外壳:8-DIP(0.300",7.62mm) 包装:卷带(TR) 描述:IC GATE DRVR HALF-BRIDGE 8DIP 集成电路(IC) 栅极驱动器 | ONSEMI 安森美半导体 | |||
High Voltage, High and Low Side Driver 文件:124.39 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
High Voltage, High and Low Side Driver 文件:106.24 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
DDR 1.8 Amp Source / Sink Termination Regulator 文件:82.95 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
DDR 1.8 Amp Source Termination Regulator 文件:82.26 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
1.8A 源/汲 VTT DDR 端接稳压器 | ONSEMI 安森美半导体 | |||
DDR 1.8 Amp Source Termination Regulator 文件:82.26 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
DDR 1.8 Amp Source Termination Regulator 文件:82.26 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
DDR 1.8 Amp Source / Sink Termination Regulator 文件:82.95 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
DDR 1.8 Amp Source Termination Regulator 文件:82.26 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
DDR 1.8 Amp Source / Sink Termination Regulator 文件:82.95 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
1.5A DDR Memory Termination Regulator 文件:152.46 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
1.5A DDR Memory Termination Regulator 文件:113.79 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
1.5A DDR Memory Termination Regulator 文件:107.53 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
1.5A DDR Memory Termination Regulator 文件:113.79 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
1.5A DDR Memory Termination Regulator 文件:113.79 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
1.5A DDR Memory Termination Regulator 文件:107.53 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
DDR Memory Termination Regulator 文件:111.46 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
DDR 2-Amp Source / Sink VTT Termination Regulator 文件:80.73 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
DDR 2-Amp Source / Sink Termination Regulator 文件:80.21 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
DDR 2-Amp Source / Sink VTT Termination Regulator 文件:80.73 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
DDR 2-Amp Source / Sink VTT Termination Regulator 文件:80.73 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
DDR 2-Amp Source / Sink Termination Regulator 文件:80.21 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low?묭ropout Voltage Regulator 文件:94.81 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low-Dropout Voltage Regulator 文件:85.53 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low-Dropout Voltage Regulator 文件:85.53 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low?묭ropout Voltage Regulator 文件:94.81 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low-Dropout Voltage Regulator 文件:106.66 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low?묭ropout Voltage Regulator 文件:94.81 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low-Dropout Voltage Regulator 文件:85.53 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low-Dropout Voltage Regulator 文件:85.53 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low?묭ropout Voltage Regulator 文件:94.81 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
150 mA CMOS Low Iq Low-Dropout Voltage Regulator 文件:106.66 Kbytes Page:11 Pages | ONSEMI 安森美半导体 |
NCP511产品属性
- 类型
描述
- 型号
NCP511
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
150 mA CMOS Low Iq Low-Dropout Voltage Regulator
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
15548 |
全新原装正品/价格优惠/质量保障 |
|||
onsemi(安森美) |
24+ |
TSOT-23-5 |
7178 |
百分百原装正品,可原型号开票 |
|||
ON |
2016+ |
SOP8 |
12938 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON |
14+ |
sop |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
24+ |
SOP8 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
ON Sem |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON |
24+ |
SOT-23-5 |
25000 |
ON全系列可订货 |
|||
ON/安森美 |
23+ |
SOP8 |
13384 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
25+ |
SOT23-5 |
37523 |
ON/安森美全新特价NCP511SN50T1G即刻询购立享优惠#长期有货 |
NCP511规格书下载地址
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NCP511数据表相关新闻
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2019-11-19NCP5203-2合1 DDR电源控制器
说明 在NCP5203 2合1 DDR电源控制器是一个完整的电源解决方案一符合ACPI高电流DDR内存系统。该IC结合了PWM控制器提供VDDQ效率提供的线性稳压器为简单的VTT终止电压。该NCP5203包含一个同步PWM降压控制器用于驱动两个外部NFETs形成的DDR内存供电电压(VDDQ的)。的?2.0用户可调的VTT终止调节器具有短路保护。一个内部电源同时监视功能良好的VDDQ和Vtt输出和信号如果发生故障。保护功能包括软启动,欠压监测5VDUAL,过电流保护(OCP的)和热关机。该集成电路的封装18引脚QFN封装。 特点
2013-2-17NCP5201-双输出DDR电源控制器
说明 在NCP5201双DDR电源控制器是专门作为一个整体功率解决方案专为高电流DDR内存系统。该IC结合了PWM控制器的效率VDDQ电压的线性稳压器为简单的VTT存储器终端电压。二次调节器(VTT)的是设计为自动跟踪一半的初级稳压器(VDDQ的)。内部电源良好电压监控器同时跟踪VDDQ和VTT的输出,并通知在出现故障时,用户其中一项输出。保护功能包括软启动电路和欠压监测VCC和VSTBY。该集成电路的封装5× 6的QFN- 18。 特点 •搭载VDDQ的,的VTT稳压器 •内
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DdatasheetPDF页码索引
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